march 2013 FDP027N08B_f102 n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDP027N08B_f102 rev. c3 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter FDP027N08B_f102 unit v dss drain to source voltage 80 v v gss gate to source voltage 20 v i d drain current -continuous (t c = 25 o c, silicon limited) 223* a -continuous (t c = 100 o c, silicon limited) 158* -continuous (t c = 25 o c, package limited) 120 i dm drain current - pulsed (note 1) 892 a e as single pulsed avalanche energy (note 2) 917 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 246 w - derate above 25 o c1.64w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDP027N08B_f102 unit r jc thermal resistance, junction to case, max 0.61 o c/w r ja thermal resistance, junction to ambient, max 62.5 g s d to-220 g s d *calculated continuous current based on maximum allowable junction temperature. package limitation current is 120a FDP027N08B_f102 n-channel powertrench ? mosfet 80 v, 223 a, 2.7 m features ?r ds(on) = 2.21 m ( typ.) @ v gs = 10 v, i d = 100 a ?low fom r ds(on) *q g ? low reverse recovery charge, q rr = 112 nc ? soft reverse recovery body diode ? enables highly efficiency in synchronous rectification ? fast switching speed ? 100% uil tested ?rohs compliant description this n-channel mosfet is produced using fairchild semiconductor ? ?s advanced powertrench ? process that has been tailored to minimize the on-state resistance while maintain- ing superior switching performance. applications ? synchronous rectification for atx / server / telecom psu ? battery protection circuit ? motor drives and uninterruptible power supplies
FDP027N08B_f102 n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2011 fairchild semiconductor corporation FDP027N08B_f102 rev. c3 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package description quantity FDP027N08B FDP027N08B_f102 to-220 f102: trimmed leads 50 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 80 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.05 - v/ o c i dss zero gate voltage drain current v ds = 64v, v gs = 0v - - 1 a v ds = 64v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.5-4.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 100a - 2.21 2.7 m g fs forward transconductance v ds = 10v, i d = 100a - 227 - s c iss input capacitance v ds = 40v, v gs = 0v f = 1mhz - 10170 13530 pf c oss output capacitance - 1670 2220 pf c rss reverse transfer capacitance - 35 - pf c oss (er) engry related output capacitance v ds = 40v, v gs = 0v - 3025 - pf q g(tot) total gate charge at 10v v ds = 40v, v gs = 10v i d = 100a (note 4) - 137 178 nc q gs gate to source gate charge - 56 - nc q gs2 gate charge threshold to plateau - 25 - nc q gd gate to drain ?miller? charge - 28 - nc esr equivalent series resistance (g-s) f = 1mhz - 2.4 - t d(on) turn-on delay time v dd = 40v, i d = 100a v gs = 10v, r gen = 4.7 (note 4) - 47 104 ns t r turn-on rise time - 66 142 ns t d(off) turn-off delay time - 87 184 ns t f turn-off fall time - 41 92 ns i s maximum continuous drain to source diode forward current - - 223* a i sm maximum pulsed drain to source diode forward current - - 892 a v sd drain to source diode forward voltage v gs = 0v, i sd = 100a - - 1.3 v t rr reverse recovery time v gs = 0v, v dd = 40v, i sd = 100a di f /dt = 100a/ s -80-ns q rr reverse recovery charge - 112 - nc notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. l = 3mh, i as = 24.72a, r g = 25 , starting t j = 25 c 3. i sd 100a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
FDP027N08B_f102 n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2011 fairchild semiconductor corporation FDP027N08B_f102 rev. c3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 1 10 100 500 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.1 1 4 5 10 100 500 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 0 100 200 300 400 500 1.0 1.5 2.0 2.5 3.0 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.3 1 10 100 500 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 30 60 90 120 150 0 2 4 6 8 10 *note: i d = 100a v ds = 16v v ds = 40v v ds = 64v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 80 10 100 1000 10000 30000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
FDP027N08B_f102 n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2011 fairchild semiconductor corporation FDP027N08B_f102 rev. c3 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to source voltage figure 12. unclamped inductive switching capability -100 -50 0 50 100 150 200 0.5 1.0 1.5 2.0 *notes: 1. v gs = 10v 2. i d = 100a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] -80 -40 0 40 80 120 160 200 0.92 0.96 1.00 1.04 1.08 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] 1 10 100 200 0.01 0.1 1 10 100 1000 2000 100us 10us 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 25 50 75 100 125 150 175 0 50 100 150 200 250 i d , drain current [a] t c , case temperature [ o c ] v gs = 10v r jc = 0.61 o c/w 0 20406080 0 1 2 3 4 5 6 e oss , [ j ] v ds , drain to source voltage [ v ] 0.001 0.01 0.1 1 10 100 1000 1 10 100 200 t j = 25 o c t j = 150 o c t av , time in avalanche (ms) i as , avalanche current (a)
FDP027N08B_f102 n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2011 fairchild semiconductor corporation FDP027N08B_f102 rev. c3 typical performance characteristics (continued) figure 13 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.005 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.61 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDP027N08B_f102 n-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2011 fairchild semiconductor corporation FDP027N08B_f102 rev. c3 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDP027N08B_f102 n-channel powertrench ? mosfet www.fairchildsemi.com 7 ?2011 fairchild semiconductor corporation FDP027N08B_f102 rev. c3 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDP027N08B_f102 n-channel powertrench ? mosfet www.fairchildsemi.com 8 ?2011 fairchild semiconductor corporation FDP027N08B_f102 rev. c3 to-220 (f102: trimmed leads) mechanical dimensions
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